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Room-temperature Continuous-wave Operation of InP/InAsP Photonic-crystal Laser
Date: Monday, March 7, 2011 Time: 4:00 PM Location: 125 Steele, Caltech Speaker: Se-Heon Kim
Kavli Nanoscience Institute / Microdevices Lab (KNI-MDL) Seminar
We report room-temperature continuous-wave (RT-CW) operation in III-V compound semiconductor photonic-crystal slab lasers emitting at telecommunication wavelength bands around 1.55 um. The optically thin photonic-crystal slab is composed of InP containing four InAsP quantum wells in the middle of it. Air holes arranged in the triangular-lattice in the slab provide a strong optical feedback in the in-plane directions, thereby forming a high-Q cavity. Contrary to the “traditional” cavity design where fine-tuned air holes were crucial to achieve high-Q, we have employed several (4-6) laterally coupled linear-type photonic-crystal cavities without introducing any modification in the position and the size of the holes. The fabricated devices were optically pumped by a commercially available 830 nm laser-diode at room temperature. A typical value of the laser threshold is about 10 uW, which seems to be very close to the required transparency pump power for the quantum wells used in this work. Such small but robust lasers, besides their obvious advantages in the future nanophotonic integrated circuits, will also be useful in biological sensing applications. Recent progress toward electrically pumped RT-CW photonic-crystal lasers will also be discussed.