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A New Electron Beam Resist for Ultra High Aspect Ratio Nano-Lithographic Applications
A New Electron Beam Resist for Ultra High Aspect Ratio Nano-Lithographic Applications

Date: Monday, June 6, 2011
Time: 4:00 PM
Location: 125 Steele, Caltech
Speaker: Guy DeRose

Kavli Nanoscience Institute / Microdevices Lab seminar


Abstract:

Poly (methylmethacrylate) is a positive tone organic electron beam resist well known to the scientific and industrial communities, and it can produce features tens of nanometers in size. To achieve such geometries, the resist film thickness must be around 40nm and, hence, it has an aspect ratio limit of approximately 4:1 using an acceleration voltage of 25KeV. Therefore, a higher aspect ratio resist is desirable for both metal deposition and etching applications. However, by increasing the acceleration voltage of 100KeV the aspect ratio can be increased, and the latest results demonstrate an aspect ratio of 12.5:1 has been achieved. A new positive tone electron beam resist called SML2000 resist has been developed at the University of Manchester to obtain large aspect ratios. Early results where the SML2000 resist has been exposed to acceleration voltage of 100KeV in the Kavli Nanoscience Institute will be presented, and show structures consisting of sub 30 nm trenches in 2131 nm thick resist. This equates to an aspect ratio of ~75:1 and is the largest aspect ratio obtained to date. We will demonstrate its use in applications for detectors and nanoelectronic devices.

Light refreshments will be served after the seminar. This event is part of Caltech’s Kavli Nanoscience Institute and JPL's Microdevices Lab Monthly Seminar Series.

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