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Layered Tunnel Barriers for Tunable Detector Applications
Layered Tunnel Barriers for Tunable Detector Applications

Date: Monday, April 6th, 2009
Time: 4:00 PM
Location: 125 Steele, Caltech
Speaker: Douglas Bell


Layered tunnel barriers have been proposed as replacements for conventional tunnel barriers in flash memories in order to decrease write/erase times. Such a decrease is expected due to voltage-induced lowering of barrier height. This talk will briefly discuss another application for these structures, that of voltage-controlled photodetection. The concept of operation and some preliminary experimental results will be presented.

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