Dr. Hannes Kraus

Dr. Hannes Kraus moved from Germany to the U.S. in August 2017, to join the JPL Instrument electronics group. Together with Dr. Corey Cochrane, he plans to bring a novel class of magnetometry devices, leveraging atomic-scale quantum centers in the rugged material silicon carbide, to application maturity.

Hannes was born and raised in Würzburg, a picturesque city in southern Germany, where he also obtained his diploma in physics (Dipl.-Phys.) in 2009, researching the spin properties of organic semiconductors with electron paramagnetic resonance spectroscopy. He stayed faithful to magnetic resonance during his doctorate, extending the scope of his research to novel materials like carbon nanotubes and the spin properties of quantum centers in silicon carbide. He earned a “summa cum laude” doctoral degree from the University of Würzburg in 2014. Also in 2014, Hannes won a Marie-Sklodowska-Curie Actions (MCSA-COFUND) exchange scholarship from the German Academic Exchange Service (DAAD), bringing him to Japan, where he joined the Group of Dr. Takeshi Ohshima at the Takasaki radiation research facility of Japan Atomic Energy Agency (JAEA). Here, he intensified his work on silicon carbide, learning how to optimize the engineering of quantum centers in the crystal, and how to characterize them with confocal optical spectroscopy. In 2016, he returned to Würzburg, Germany, to foster the collaboration between the institutes in Japan and Germany, finally leaving for the US in 2017.


Education: 
  • 2014 Doctor of Physics (Dr. rer. nat., summa cum laude, University of Würzburg, Germany)
  • 2009 Diploma of Physics (University of Würzburg, Germany)

Research Interests: 
  • Planetary Science
  • Magnetometry
  • Optical Spectroscopy and Confocal Microscopy
  • Electron Paramagnetic Resonance Spectroscopy

Professional Experience: 
  • Since 2017-08 
         NASA Jet Propulsion Laboratory, Pasadena CA, USA
         NASA Postdoctoral Program (NPP)
  • 2016-08 ­– 2017-08
         University  of Würzburg, Germany
         Postdoctoral researcher
  • 2016-01 – 2016-07
         University of Würzburg, Germany
         Returning MCSA/DAAD PRIME postdoctoral fellow
  • 2015
         Japan Atomic Energy Agency (JAEA), Takasaki, Japan
         MCSA/DAAD PRIME postdoctoral fellow
  • 2010 ­– 2014
         University of Würzburg, Germany
         Doctoral Candidate / Research Scientist

Selected Awards: 
  • NASA Postdoctoral Program scholarship (2017-2019)
  • Bavarian Research Alliance (BayFOR) Funding Programme for the Initiation of International Projects (BayIntAn) cooperation intensification grant (Germany-Japan) in May 2017
  • DAAD conference travel grant for the International Conference on Silicon Carbide and Related Materials 2015 (Giardini Naxos,Italy)
  • DAAD P.R.I.M.E. postdoc scholarship (Marie-Skłodowska-Curie-Action COFUND) for 2015–June 2016
  • DAAD conference travel grant for the International Conference on Silicon Carbide and Related Materials 2013 (Miyazaki, Japan)
  • Energy & Environmental Science Poster Prize 2013 at the Solar Energy Conversion Meeting, Kloster Banz, Germany 2013
  • Upgrade to invited talk at Materials Research Society Spring Meeting 2012 by Prof. Alejandro Briseño
  • DAAD conference travel grant for Materials Research Society Spring Meeting 2012 (San Francisco, USA)
  • Energy & Environmental Science Poster Prize 2011 at the SPP 1355 summer school together with Andreas Sperlich. Veitshöchheim, Germany 2011

Selected Publications: 

Peer-reviewed Publications

  1. Kraus, H., Simin, D., Kasper, C., Suda, Y., Kawabata, S., Kada, W., Honda, T., Hijikata, Y., Ohshima, T., Dyakonov, V., Astakhov, G. V., 2017. Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide. Nano Letters 17, 2865
  2. Simin, D., Kraus, H., Sperlich, A., Ohshima, T., Astakhov, G.V., Dyakonov, V., 2017. Locking of electron spin coherence above 20 ms in natural silicon carbide. Phys. Rev. B 95, 161201
  3. Kraus, H., Soltamov, V.A., Riedel, D., Väth, S., Fuchs, F., Sperlich, A., Baranov, P.G., Dyakonov, V., Astakhov, G.V., 2014. Room-temperature quantum microwave emitters based on spin defects in silicon carbide. Nature Phys. 10, 157–162.
  4. Stich, D., Späth, F., Kraus, H., Sperlich, A., Dyakonov, V., Hertel, T., 2013. Triplet–triplet exciton dynamics in single-walled carbon nanotubes. Nature Photonics 8, 139–144.
  5. Kraus, H., Soltamov, V.A., Fuchs, F., Simin, D., Sperlich, A., Baranov, P.G., Astakhov, G.V., Dyakonov, V., 2014. Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide. Sci. Rep. 4, 5303.
  6. Simin, D., Fuchs, F., Kraus, H., Sperlich, A., Baranov, P.G., Astakhov, G.V., Dyakonov, V., 2015. High-Precision Angle-Resolved Magnetometry with Uniaxial Quantum Centers in Silicon Carbide. Phys. Rev. Applied 4, 014009–8.
  7. Riedel, D., Fuchs, F., Kraus, H., Väth, S., Sperlich, A., Dyakonov, V., Soltamova, A.A., Baranov, P.G., Ilyin, V.A., Astakhov, G.V., 2012. Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide. Phys. Rev. Lett. 109, 226402.
  8. Kraus, H., Heiber, M.C., Väth, S., Kern, J., Deibel, C., Sperlich, A., Dyakonov, V., 2016. Analysis of Triplet Exciton Loss Pathways in PTB7:PC71BM Bulk Heterojunction Solar Cells. Sci. Rep. 6, 29158.
  9. Liedtke, M., Sperlich, A., Kraus, H., Baumann, A., Deibel, C., Wirix, M.J.M., Loos, J., Cardona, C.M., Dyakonov, V., 2011. Triplet Exciton Generation in Bulk-Heterojunction Solar Cells Based on Endohedral Fullerenes. J. Am. Chem. Soc. 133, 9088–9094.
  10. Braunschweig, H., Dyakonov, V., Engels, B., Falk, Z., Hörl, C., Klein, J.H., Kramer, T., Kraus, H., Krummenacher, I., Lambert, C., Walter, C., 2013. Multiple Reduction of 2,5-Bis(borolyl)thiophene: Isolation of a Negative Bipolaron by Comproportionation. Angew. Chem. Int. Ed. 52, 12852–12855.
  11. Savenije, T.J., Sperlich, A., Kraus, H., Poluektov, O., Heeney, M., Dyakonov, V., 2011. Observation of bi-polarons in blends of conjugated copolymers and fullerene derivatives. Phys. Chem. Chem. Phys. 13, 16579.
  12. Sperlich, A., Kraus, H., Deibel, C., Blok, H., Schmidt, J., Dyakonov, V., 2011a. Reversible and irreversible interactions of poly (3-hexylthiophene) with oxygen studied by spin-sensitive methods. J. Phys. Chem. B 115, 13513–13518.
  13. Sperlich, A., Liedtke, M., Kern, J., Kraus, H., Deibel, C., Filippone, S., Delgado, J.L., Martín, N., Dyakonov, V., 2011b. Photoinduced C70 radical anions in polymer: fullerene blends. Phys. Status Solidi RRL 5, 128–130.
     

Books

  1. V. Dyakonov, H. Kraus, A. Sperlich, R. Magerle, M. Zerson, and M. Dehnert, "Interplay Between Microscopic Structure and Intermolecular Charge-Transfer Processes in Polymer–Fullerene Bulk Heterojunctions" in "Elementary Processes in Organic Photovoltaics", Advances in Polymer Science vol. 272, Springer, Cham 2017.

 

Proceedings

  1. Ohshima, T., Honda, T., Onoda, S., Makino, T., Haruyama, M., Kamiya, T., et al. (2017). Creation and Functionalization of Defects in SiC by Proton Beam Writing. Materials Science Forum, vol. 897, 233–237.
  2. V. Dyakonov, H. Kraus, V. A. Soltamov, F. Fuchs, D. Simin, S. Vaeth, A. Sperlich, P. Baranov, and G. AStakhov, “Atomic-Scale Defects in Silicon Carbide for Quantum Sensing Applications,” Materials Science Forum, vol. 821, pp. 355–358, Jun. 2015.
  3. Invited Talk: H. Kraus, D. Simin, F. Fuchs, S. Onoda, T. Makino, V. Dyakonov, T. Ohshima, G. V. Astakhov, and G. V. Astakhov, “Defect Engineering in Silicon Carbide: Single Photon Sources, Quantum Sensors and RF Emitters,” presented at the International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, 2015, pp. 176–179.
  4. M. Liedtke, A. Sperlich, H. Kraus, C. Deibel, V. Dyakonov, S. Filippone, J. L. Delgado, N. Martín, and O. G. Poluektov, “Spectroscopic Signatures of Photogenerated Radical Anions in Polymer-[C70] Fullerene Bulk Heterojunctions,” ECS Transactions, vol. 28, no. 17, pp. 3–10, 2010.

 

Oral Presentation – Invited

  1. International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA), Kiryu, Gunma, Japan 2015. H. Kraus, D. Simin, F. Fuchs, S. Onoda, T. Makino, V. Dyakonov, T. Ohshima, G. V. Astakhov, and G. V. Astakhov ­ Defect Engineering in Silicon Carbide: Single Photon Sources, Quantum Sensors and RF Emitters
Hannes Kraus
Address: 
4800 Oak Grove Dr.
Pasadena, CA 91109
Phone: 818.354.2536